Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei Hsiang Wang; Elica Heredia; Syue Ru Lyu; Shu Hao Liu; Po Yung Liao; Ting Chang Chang; Pei Hsun Jiang

doi:10.1109/LED.2017.2786547

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wei Hsiang Wang
, Elica Heredia
, Syue Ru Lyu
, Shu Hao Liu
, Po Yung Liao
, Ting Chang Chang
, Pei Hsun Jiang^*

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

原文	英語
文章編號	8234569
頁（從 - 到）	212-215
頁數	4
期刊	IEEE Electron Device Letters
卷	39
發行號	2
DOIs	https://doi.org/10.1109/LED.2017.2786547
出版狀態	已發佈 - 2018 2月

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2017.2786547

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@article{619fe064abe041a982d2cce585f39034,

title = "Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors",

abstract = "We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.",

keywords = "IGZO, Quantum interference, TFT, spintronics, weak antilocalization, weak localization",

author = "Wang, \{Wei Hsiang\} and Elica Heredia and Lyu, \{Syue Ru\} and Liu, \{Shu Hao\} and Liao, \{Po Yung\} and Chang, \{Ting Chang\} and Jiang, \{Pei Hsun\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = feb,

doi = "10.1109/LED.2017.2786547",

language = "English",

volume = "39",

pages = "212--215",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

AU - Wang, Wei Hsiang

AU - Heredia, Elica

AU - Lyu, Syue Ru

AU - Liu, Shu Hao

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Jiang, Pei Hsun

PY - 2018/2

Y1 - 2018/2

N2 - We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

AB - We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double-gate amorphous InGaZnO thin-film transistors. This letter unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.

KW - IGZO

KW - Quantum interference

KW - TFT

KW - spintronics

KW - weak antilocalization

KW - weak localization

UR - https://www.scopus.com/pages/publications/85039775812

UR - https://www.scopus.com/pages/publications/85039775812#tab=citedBy

U2 - 10.1109/LED.2017.2786547

DO - 10.1109/LED.2017.2786547

M3 - Article

AN - SCOPUS:85039775812

SN - 0741-3106

VL - 39

SP - 212

EP - 215

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 8234569

ER -

Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

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