Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures

P. Chang, C. Hsu, W. Lin

研究成果: 書貢獻/報告類型會議貢獻

摘要

The metal/oxide hetero-structure has attracted much attention in recent decades because of its potential in various applications such as heterogeneous catalysis. In particular, the combination of magnetic metal with an oxide thin film, e.g., the magneto-tunneling junction, has been widely studied and applied in data storage and spintronics. ZnO is one of the important semiconducting materials, not only for photoluminescence but also more importantly for its promising applications in spintronics. Transition metal-doped ZnO is predicted to be useful as a magnetic semiconductor for room-temperature (RT) application. Furthermore, ZnO exhibits the largest electromechanical response, among the known tetrahedral semiconductors, which makes it suitable for devices in microelectromechanical and communication systems.

原文英語
主出版物標題2015 IEEE International Magnetics Conference, INTERMAG 2015
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479973224
DOIs
出版狀態已發佈 - 2015 七月 14
事件2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, 中国
持續時間: 2015 五月 112015 五月 15

出版系列

名字2015 IEEE International Magnetics Conference, INTERMAG 2015

其他

其他2015 IEEE International Magnetics Conference, INTERMAG 2015
國家中国
城市Beijing
期間15/5/1115/5/15

    指紋

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此

Chang, P., Hsu, C., & Lin, W. (2015). Voltage-induced reversible and irreversible changes in the magnetic coercivity of Fe, Co/ZnO heterostructures. 於 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7157165] (2015 IEEE International Magnetics Conference, INTERMAG 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7157165