Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure

Chuan Che Hsu, Po Chun Chang, Venkata Ramana Mudinepalli, Tsung Chun Hsieh, Fang-Yuh Lo, Wen-Chin Lin

研究成果: 雜誌貢獻文章

5 引文 (Scopus)

摘要

In this study, the application of bias voltage to 4-8 nm Co/275 nm ZnO heterostructures changed the magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The magnetic coercivity (Hc) monotonically decreased 20% when the small voltages of 0-8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferromagnetic Co-oxide.

原文英語
文章編號093905
期刊Journal of Applied Physics
119
發行號9
DOIs
出版狀態已發佈 - 2016 三月 7

指紋

coercivity
electric potential
oxides
polarity
photoelectric emission
heating
augmentation
room temperature
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

引用此文

Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure. / Hsu, Chuan Che; Chang, Po Chun; Mudinepalli, Venkata Ramana; Hsieh, Tsung Chun; Lo, Fang-Yuh; Lin, Wen-Chin.

於: Journal of Applied Physics, 卷 119, 編號 9, 093905, 07.03.2016.

研究成果: 雜誌貢獻文章

Hsu, Chuan Che ; Chang, Po Chun ; Mudinepalli, Venkata Ramana ; Hsieh, Tsung Chun ; Lo, Fang-Yuh ; Lin, Wen-Chin. / Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure. 於: Journal of Applied Physics. 2016 ; 卷 119, 編號 9.
@article{057e36259e354e998f05d4c2398bc697,
title = "Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure",
abstract = "In this study, the application of bias voltage to 4-8 nm Co/275 nm ZnO heterostructures changed the magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The magnetic coercivity (Hc) monotonically decreased 20{\%} when the small voltages of 0-8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferromagnetic Co-oxide.",
author = "Hsu, {Chuan Che} and Chang, {Po Chun} and Mudinepalli, {Venkata Ramana} and Hsieh, {Tsung Chun} and Fang-Yuh Lo and Wen-Chin Lin",
year = "2016",
month = "3",
day = "7",
doi = "10.1063/1.4942852",
language = "English",
volume = "119",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Voltage induced reversible and irreversible change of magnetic coercivity in Co/ZnO heterostructure

AU - Hsu, Chuan Che

AU - Chang, Po Chun

AU - Mudinepalli, Venkata Ramana

AU - Hsieh, Tsung Chun

AU - Lo, Fang-Yuh

AU - Lin, Wen-Chin

PY - 2016/3/7

Y1 - 2016/3/7

N2 - In this study, the application of bias voltage to 4-8 nm Co/275 nm ZnO heterostructures changed the magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The magnetic coercivity (Hc) monotonically decreased 20% when the small voltages of 0-8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferromagnetic Co-oxide.

AB - In this study, the application of bias voltage to 4-8 nm Co/275 nm ZnO heterostructures changed the magnetic behavior reversibly or irreversibly, depending on the different voltage-induced mechanisms. The magnetic coercivity (Hc) monotonically decreased 20% when the small voltages of 0-8 V were applied. The Hc reduction was symmetric with the voltage polarity, and the reversibility was demonstrated by cyclically switching the bias voltage between 0 and 7 V. While a large voltage up to 40 V was applied to the Co/ZnO junction, the current heating effect became considerable and the Co-oxide was formed, as confirmed by depth-profiling X-ray photoemission spectroscopy analysis. The presence of Co-oxide in the Co films induced the irreversible reduction of the Kerr signal and Hc at room temperature. The considerable Hc enhancement at 130 K also indicates the exchange bias coupling effect from the antiferromagnetic Co-oxide.

UR - http://www.scopus.com/inward/record.url?scp=84959488386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959488386&partnerID=8YFLogxK

U2 - 10.1063/1.4942852

DO - 10.1063/1.4942852

M3 - Article

AN - SCOPUS:84959488386

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

M1 - 093905

ER -