Voltage controlled photoluminescence blinking in CdSe nano-particles

Horng Shyang Chen*, Tao Hsiang Chung, Ming Chou Lin, Yann Wen Lan, Chii Dong Chen, Hung Yi Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Voltage controlled photoluminescence (PL) blinking behavior in CdSe nano-particles (NPs) is studied. The NPs are sandwiched between a p-type silicon substrate and a thin Au electrode, which serve respectively as source and drain electrodes. The blinking PL from the NPs can be controlled by the bias voltage across the two electrodes. However, luminescence diminishes when photo excitation power is weak or bias is lower than a threshold voltage. The observed PL blinking is explained by a circuit model, which involves charge tunneling, Fowler-Nordheim (F-N) emission, and charging effect. The blinking intensity is controlled by the number of F-N emitted electrons whereas the pulse interval is associated with the time required for hole accumulation in the NPs. The intensity of luminescence blinking for NP clusters is found to be much higher compared to that of blinking from isolated NPs. This is explained by a collective recombination of F-N emitted electrons and accumulated holes in the NP clusters. This study provides a simple way of controlling PL blinking.

原文英語
頁(從 - 到)26872-26878
頁數7
期刊Optics Express
18
發行號26
DOIs
出版狀態已發佈 - 2010 十二月 20
對外發佈

ASJC Scopus subject areas

  • 原子與分子物理與光學

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