摘要
Transmittance of the device was as high as ∼75%. Phase shift exceeding φ/2 at 1.0 THz is achieved in a ∼500 μm-thick cell. The driving voltage required for the device operating as a quarter-wave plate was as low as 17.68 V (rms), an improvement of nearly an order of magnitude over previous work.
原文 | 英語 |
---|---|
頁(從 - 到) | 2511-2513 |
頁數 | 3 |
期刊 | Optics Letters |
卷 | 39 |
發行號 | 8 |
DOIs | |
出版狀態 | 已發佈 - 2014 4月 15 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 原子與分子物理與光學