Visualizing Ferroelectric Uniformity of Hf_{1- x}Zr _xO₂Films Using X-ray Mapping

INIS

• absorption spectroscopy 20%
• annealing 40%
• capacitance 20%
• capacitors 20%
• distribution 20%
• ferroelectric materials 100%
• field effect transistors 20%
• films 40%
• induction 20%
• integrated circuits 20%
• kinetics 20%
• low temperature 20%
• mapping 100%
• metals 40%
• modeling 20%
• monoclinic lattices 20%
• nucleation 20%
• optimization 20%
• orthorhombic lattices 20%
• oxides 40%
• phase transformations 20%
• polarization 20%
• semiconductor materials 40%
• suppression 20%
• synchrotrons 20%
• thin films 20%
• values 40%
• x radiation 100%

Physics

• Absorption Spectroscopy 25%
• Annealing 25%
• Capacitance 25%
• Capacitor 25%
• Ferroelectricity 100%
• Field Effect Transistor 25%
• Integrated Circuit 25%
• Kinetics 25%
• Memory 25%
• Metal Oxide Semiconductor 50%
• Nucleation 25%
• Optimization 25%
• Phase Transition 25%
• Retarding 25%
• Technology 25%
• Temperature 25%
• Thin Films 25%
• Value 50%
• X Ray 100%

Material Science

• Absorption Spectroscopy 20%
• Annealing 20%
• Capacitance 20%
• Capacitor 20%
• Complementary Metal-Oxide-Semiconductor Device 40%
• Electronic Circuit 20%
• Ferroelectric Material 100%
• Field Effect Transistor 20%
• Film 20%
• Temperature 20%
• Thin Films 20%