TY - GEN
T1 - Very high performance non-volatile memory on flexible plastic substrate
AU - Cheng, C. H.
AU - Chou, K. Y.
AU - Chin, Albert
AU - Yeh, F. S.
PY - 2010
Y1 - 2010
N2 - We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.
AB - We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.
UR - http://www.scopus.com/inward/record.url?scp=79951838110&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951838110&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2010.5703408
DO - 10.1109/IEDM.2010.5703408
M3 - Conference contribution
AN - SCOPUS:79951838110
SN - 9781424474196
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 21.5.1-21.5.4
BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010
T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010
Y2 - 6 December 2010 through 8 December 2010
ER -