Very high performance non-volatile memory on flexible plastic substrate

C. H. Cheng, K. Y. Chou, Albert Chin, F. S. Yeh

研究成果: 書貢獻/報告類型會議貢獻

4 引文 斯高帕斯(Scopus)

摘要

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 μW switching power (1.6 μA at 3 V; -0.5 nA at -2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.

原文英語
主出版物標題2010 IEEE International Electron Devices Meeting, IEDM 2010
頁面21.5.1-21.5.4
DOIs
出版狀態已發佈 - 2010 十二月 1
事件2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, 美国
持續時間: 2010 十二月 62010 十二月 8

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

其他

其他2010 IEEE International Electron Devices Meeting, IEDM 2010
國家美国
城市San Francisco, CA
期間2010/12/062010/12/08

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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