摘要
Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.
原文 | 英語 |
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文章編號 | 153301 |
期刊 | Applied Physics Letters |
卷 | 106 |
發行號 | 15 |
DOIs | |
出版狀態 | 已發佈 - 2015 4月 13 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學(雜項)