Vertical organic transistors withstanding high voltage bias

Po Yi Chang, Shao Fu Peng, Yu Chiang Chao, Hung Cheng Lin, Hsiao Wen Zan, Hsin Fei Meng

研究成果: 雜誌貢獻文章同行評審

2 引文 斯高帕斯(Scopus)

摘要

Vertical organic transistors withstanding high voltage bias were realized with an insulating silicon monoxide layer obliquely deposited on both the surface of the base electrode and sidewalls of the vertically oriented cylindrical nanopores. No noticeable insulating layer can be observed on the emitter electrode at the bottom of the cylindrical nanopores. The leakage current between the electrodes was suppressed and an operating voltage as high as 15 V was obtained. An on/off current ratio of 103-104 and an output current density of 5-10 mA/cm2 were achieved.

原文英語
文章編號153301
期刊Applied Physics Letters
106
發行號15
DOIs
出版狀態已發佈 - 2015 四月 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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