摘要
Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal-insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal-insulator transition of VO2 is further revealed with a change in electrical resistance over 103 and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.
原文 | 英語 |
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頁(從 - 到) | 3914-3919 |
頁數 | 6 |
期刊 | Chemistry of Materials |
卷 | 28 |
發行號 | 11 |
DOIs | |
出版狀態 | 已發佈 - 2016 6月 14 |
ASJC Scopus subject areas
- 一般化學
- 一般化學工程
- 材料化學