Van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite

Chien I. Li, Jheng Cyuan Lin, Heng Jui Liu, Ming Wen Chu, Hsiao Wen Chen, Chun Hao Ma, Chih Ya Tsai, Hsin Wei Huang, Hong Ji Lin, Hsiang Lin Liu, Po Wen Chiu, Ying Hao Chu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

105 引文 斯高帕斯(Scopus)

摘要

Vanadium dioxide (VO2) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal-insulator transition. In this study, in order to realize functional VO2 film for flexible electronics, the growth of VO2 film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO2 films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal-insulator transition of VO2 is further revealed with a change in electrical resistance over 103 and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO2/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO2 film for the applications in flexible electronics.

原文英語
頁(從 - 到)3914-3919
頁數6
期刊Chemistry of Materials
28
發行號11
DOIs
出版狀態已發佈 - 2016 6月 14

ASJC Scopus subject areas

  • 一般化學
  • 一般化學工程
  • 材料化學

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