V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Li Wei Sung*, Hao Hsiung Lin, Chih Ta Chia

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

原文英語
頁(從 - 到)117-122
頁數6
期刊Materials Research Society Symposium - Proceedings
693
出版狀態已發佈 - 2002
對外發佈
事件GaN and Related Alloys-2001 - Boston, MA, 美国
持續時間: 2001 11月 262001 11月 30

ASJC Scopus subject areas

  • 一般材料科學
  • 凝聚態物理學
  • 材料力學
  • 機械工業

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