We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.
|頁（從 - 到）||117-122|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||已發佈 - 2002|
|事件||GaN and Related Alloys-2001 - Boston, MA, 美国|
持續時間: 2001 11月 26 → 2001 11月 30
ASJC Scopus subject areas