V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE

Li Wei Sung, Hao Hsiung Lin, Chi-Ta Chia

研究成果: 雜誌貢獻會議論文同行評審

摘要

We report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga, stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate GA stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

原文英語
頁(從 - 到)117-122
頁數6
期刊Materials Research Society Symposium - Proceedings
693
出版狀態已發佈 - 2002 一月 1
事件GaN and Related Alloys-2001 - Boston, MA, 美国
持續時間: 2001 十一月 262001 十一月 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

指紋 深入研究「V-III ratio effect on cubic GaN grown by RF plasma assisted gas source MBE」主題。共同形成了獨特的指紋。

引用此