Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su; Yu Chieh Wen; Yu Liang Hong; Hong Mao Lee; Shangjr Gwo; Yuan Ting Lin; Li Wei Tu; Hsiang Lin Liu; Chi Kuang Sun

doi:10.1063/1.3591974

Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

Yi En Su^*, Yu Chieh Wen, Yu Liang Hong, Hong Mao Lee, Shangjr Gwo, Yuan Ting Lin, Li Wei Tu, Hsiang Lin Liu, Chi Kuang Sun

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

原文	英語
文章編號	252106
期刊	Applied Physics Letters
卷	98
發行號	25
DOIs	https://doi.org/10.1063/1.3591974
出版狀態	已發佈 - 2011 6月 20

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN",

abstract = "The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.",

author = "Su, {Yi En} and Wen, {Yu Chieh} and Hong, {Yu Liang} and Lee, {Hong Mao} and Shangjr Gwo and Lin, {Yuan Ting} and Tu, {Li Wei} and Liu, {Hsiang Lin} and Sun, {Chi Kuang}",

note = "Funding Information: This work was sponsored by National Science Council under Contract No. NSC99-2120-M-002-013.",

year = "2011",

month = jun,

day = "20",

doi = "10.1063/1.3591974",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

AU - Su, Yi En

AU - Wen, Yu Chieh

AU - Hong, Yu Liang

AU - Lee, Hong Mao

AU - Gwo, Shangjr

AU - Lin, Yuan Ting

AU - Tu, Li Wei

AU - Liu, Hsiang Lin

AU - Sun, Chi Kuang

N1 - Funding Information: This work was sponsored by National Science Council under Contract No. NSC99-2120-M-002-013.

PY - 2011/6/20

Y1 - 2011/6/20

N2 - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

AB - The screening effect of heavy-hole LO-phonon interaction is observed and studied through the pump-probe transmission measurement in Mg-doped InN. Combining the measured transient hole dynamics with the absorption spectra, the optical based observation is able to prevent the influence of the surface n-type layer and the depression layer in Mg-doped InN. With the observed heavy-hole heating time at different photoexcited carrier densities and the measured absorption edge, we show that it is now possible to estimate the background hole density and band gap energy in Mg-doped InN.

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DO - 10.1063/1.3591974

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JO - Applied Physics Letters

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ER -

Using hole screening effect on hole-phonon interaction to estimate hole density in Mg-doped InN

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