Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors

K. C. Chiang, C. H. Cheng, K. Y. Jhou, H. C. Pan, C. N. Hsiao, C. P. Chou, S. P. McAlister, Albert Chin, H. L. Hwang

研究成果: 雜誌貢獻文章

32 引文 (Scopus)

摘要

We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

原文英語
頁(從 - 到)694-696
頁數3
期刊IEEE Electron Device Letters
28
發行號8
DOIs
出版狀態已發佈 - 2007 八月 1
對外發佈Yes

指紋

Capacitors
Metals
Electrodes
Capacitance
Electric potential
Energy gap
strontium titanium oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. / Chiang, K. C.; Cheng, C. H.; Jhou, K. Y.; Pan, H. C.; Hsiao, C. N.; Chou, C. P.; McAlister, S. P.; Chin, Albert; Hwang, H. L.

於: IEEE Electron Device Letters, 卷 28, 編號 8, 01.08.2007, p. 694-696.

研究成果: 雜誌貢獻文章

Chiang, K. C. ; Cheng, C. H. ; Jhou, K. Y. ; Pan, H. C. ; Hsiao, C. N. ; Chou, C. P. ; McAlister, S. P. ; Chin, Albert ; Hwang, H. L. / Use of a high-work-function Ni electrode to improve the stress reliability of analog SrTiO3 metal-insulator-metal capacitors. 於: IEEE Electron Device Letters. 2007 ; 卷 28, 編號 8. 頁 694-696.
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abstract = "We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.",
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AU - Chiang, K. C.

AU - Cheng, C. H.

AU - Jhou, K. Y.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - McAlister, S. P.

AU - Chin, Albert

AU - Hwang, H. L.

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AB - We have studied the stress reliability of low-energy-bandgap high-κ SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation ( Δ C/C), the quadratic voltage coefficient of capacitance (VCC-α), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.

KW - High work function

KW - Metal-insulator-metal (MIM)

KW - Ni

KW - Reliability

KW - SrTiO (STO)

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