Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang; F. S. Chang; Z. F. Lou; A. Aich; A. Senapati; J. Y. Lee; Z. X. Li; J. H. Chen; C. H. Liu; C. W. Liu; S. Maikap; P. Su; T. H. Hou; M. H. Lee

doi:10.1109/TED.2024.3364116

Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang
, F. S. Chang
, Z. F. Lou
, A. Aich
, A. Senapati
, J. Y. Lee
, Z. X. Li
, J. H. Chen
, C. H. Liu
, C. W. Liu
, S. Maikap
, P. Su
, T. H. Hou
, M. H. Lee^*

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

原文	英語
頁（從 - 到）	2708-2713
頁數	6
期刊	IEEE Transactions on Electron Devices
卷	71
發行號	4
DOIs	https://doi.org/10.1109/TED.2024.3364116
出版狀態	已發佈 - 2024 4月 1
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/TED.2024.3364116

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引用此

Hsiang, K. Y., Chang, F. S., Lou, Z. F., Aich, A., Senapati, A., Lee, J. Y., Li, Z. X., Chen, J. H., Liu, C. H., Liu, C. W., Maikap, S., Su, P., Hou, T. H., & Lee, M. H. (2024). Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit. IEEE Transactions on Electron Devices, 71(4), 2708-2713. https://doi.org/10.1109/TED.2024.3364116

Hsiang, KY, Chang, FS, Lou, ZF, Aich, A, Senapati, A, Lee, JY, Li, ZX, Chen, JH, Liu, CH, Liu, CW, Maikap, S, Su, P, Hou, TH & Lee, MH 2024, 'Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit', IEEE Transactions on Electron Devices, 卷 71, 編號 4, 頁 2708-2713. https://doi.org/10.1109/TED.2024.3364116

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abstract = "Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.",

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AU - Hsiang, K. Y.

AU - Chang, F. S.

AU - Lou, Z. F.

AU - Aich, A.

AU - Senapati, A.

AU - Lee, J. Y.

AU - Li, Z. X.

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AU - Liu, C. H.

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N2 - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

AB - Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

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KW - recovery

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Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

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