Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes

Kuo Yu Hsiang, Chun Yu Liao, Jer Fu Wang, Zhao Feng Lou, Chen Ying Lin, Shih Hung Chiang, Chee Wee Liu, Tuo Hung Hou, Min Hung Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

原文英語
文章編號2685
期刊Nanomaterials
11
發行號10
DOIs
出版狀態已發佈 - 2021 10月

ASJC Scopus subject areas

  • 化學工程 (全部)
  • 材料科學(全部)

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