Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou; Chun Hu Cheng; Po Chun Chen; Fon Shan Yeh; Albert Chin

doi:10.1143/JJAP.50.121801

Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory

Kun I. Chou^*
, Chun Hu Cheng
, Po Chun Chen
, Fon Shan Yeh
, Albert Chin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

5 引文斯高帕斯（Scopus）

摘要

In this study we propose a resistive random-access memory (RRAM) using stacked GeO_x and PbZr_0:5Ti_0:5O₃ (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10₂, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeO_x.

原文	英語
文章編號	121801
期刊	Japanese Journal of Applied Physics
卷	50
發行號	12
DOIs	https://doi.org/10.1143/JJAP.50.121801
出版狀態	已發佈 - 2011 12月
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.1143/JJAP.50.121801

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abstract = "In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.",

author = "Chou, \{Kun I.\} and Cheng, \{Chun Hu\} and Chen, \{Po Chun\} and Yeh, \{Fon Shan\} and Albert Chin",

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AU - Chou, Kun I.

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Yeh, Fon Shan

AU - Chin, Albert

PY - 2011/12

Y1 - 2011/12

N2 - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

AB - In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

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DO - 10.1143/JJAP.50.121801

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SN - 0021-4922

VL - 50

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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M1 - 121801

ER -

Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

摘要

ASJC Scopus subject areas

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指紋

引用此

Unipolar Ni/GeO_x/PbZr_0:5Ti_0:5O ₃/TaN resistive switching memory