Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou*, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

原文英語
文章編號121801
期刊Japanese Journal of Applied Physics
50
發行號12
DOIs
出版狀態已發佈 - 2011 十二月

ASJC Scopus subject areas

  • 工程 (全部)
  • 物理與天文學 (全部)

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