Unipolar Ni/GeOx/PbZr0:5Ti0:5O 3/TaN resistive switching memory

Kun I. Chou, Chun Hu Cheng, Po Chun Chen, Fon Shan Yeh, Albert Chin

研究成果: 雜誌貢獻文章

3 引文 斯高帕斯(Scopus)

摘要

In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0:5Ti0:5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx.

原文英語
文章編號121801
期刊Japanese Journal of Applied Physics
50
發行號12
DOIs
出版狀態已發佈 - 2011 十二月 1

    指紋

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

引用此