Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng, Min-Hung Lee, S. T. Chang*, C. Y. Lin, K. T. Chen, B. F. Hsieh

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    5 引文 斯高帕斯(Scopus)

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    Engineering & Materials Science

    Chemical Compounds

    Physics & Astronomy