Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng; M. H. Lee; S. T. Chang; C. Y. Lin; K. T. Chen; B. F. Hsieh

doi:10.1016/j.tsf.2013.02.070

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng
, M. H. Lee
, S. T. Chang^*
, C. Y. Lin
, K. T. Chen
, B. F. Hsieh

^*此作品的通信作者

光電工程研究所暨學士學位學程

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

6 引文斯高帕斯（Scopus）

摘要

The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

原文	英語
頁（從 - 到）	487-490
頁數	4
期刊	Thin Solid Films
卷	544
DOIs	https://doi.org/10.1016/j.tsf.2013.02.070
出版狀態	已發佈 - 2013 10月 1

ASJC Scopus subject areas

電子、光磁材料
表面和介面
表面、塗料和薄膜
金屬和合金
材料化學

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10.1016/j.tsf.2013.02.070

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title = "Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors",

abstract = "The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown",

keywords = "Mobility, SiGe, Split capacitance-voltage, Strain, Subband",

author = "Cheng, \{S. Y.\} and Lee, \{M. H.\} and Chang, \{S. T.\} and Lin, \{C. Y.\} and Chen, \{K. T.\} and Hsieh, \{B. F.\}",

note = "Funding Information: This work was supported by the National Science Council, Taiwan, ROC , under the contract no. NSC-100-2221-E-005-010-MY3 (S.T. Chang). ",

year = "2013",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2013.02.070",

language = "English",

volume = "544",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

AU - Cheng, S. Y.

AU - Lee, M. H.

AU - Chang, S. T.

AU - Lin, C. Y.

AU - Chen, K. T.

AU - Hsieh, B. F.

N1 - Funding Information: This work was supported by the National Science Council, Taiwan, ROC , under the contract no. NSC-100-2221-E-005-010-MY3 (S.T. Chang).

PY - 2013/10/1

Y1 - 2013/10/1

N2 - The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

AB - The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

KW - Mobility

KW - SiGe

KW - Split capacitance-voltage

KW - Strain

KW - Subband

UR - https://www.scopus.com/pages/publications/84901855012

UR - https://www.scopus.com/pages/publications/84901855012#tab=citedBy

U2 - 10.1016/j.tsf.2013.02.070

DO - 10.1016/j.tsf.2013.02.070

M3 - Article

AN - SCOPUS:84901855012

SN - 0040-6090

VL - 544

SP - 487

EP - 490

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

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