Uniaxial stress effect and hole mobility in high-Ge content strained SiGe (110) P-channel metal oxide semiconductor field effect transistors

S. Y. Cheng, Min-Hung Lee, S. T. Chang, C. Y. Lin, K. T. Chen, B. F. Hsieh

    研究成果: 雜誌貢獻期刊論文同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    The holemobility in a high Ge-content (110) SiGe inversion layer ismeasured and simulated by a split capacitance-voltage method and a quantized k p method, respectively. The calibrated model reproduces our experimental channelmobilitymeasurements for the biaxial compressive strain SiGe on (110) substrate.We also explore the impact of external mechanical uniaxial stress on the SiGe (110)p-channelmetal oxide semiconductor field effect transistor (PMOSFET). We obtained the corresponding piezoresistance coefficients of the SiGe (110) PMOSFET with external mechanical uniaxial stress parallel and perpendicular to the channel direction. Our study shows the effectiveness in combining externalmechanical uniaxial stress and intrinsic biaxial compressive strain for the SiGe (110) PMOSFET. Crown

    原文英語
    頁(從 - 到)487-490
    頁數4
    期刊Thin Solid Films
    544
    DOIs
    出版狀態已發佈 - 2013 十月 1

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 表面和介面
    • 表面、塗料和薄膜
    • 金屬和合金
    • 材料化學

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