Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/LED.2010.2095820

Ultralow switching energy Ni/GeO_x/HfON/TaN RRAM

C. H. Cheng
, Albert Chin
, F. S. Yeh

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

38 引文斯高帕斯（Scopus）

摘要

Using stacked covalent-bond-dielectric GeO_x on metaloxynitride HfON, the NiGeO_x/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10^-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

原文	英語
文章編號	5680574
頁（從 - 到）	366-368
頁數	3
期刊	IEEE Electron Device Letters
卷	32
發行號	3
DOIs	https://doi.org/10.1109/LED.2010.2095820
出版狀態	已發佈 - 2011 3月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
電氣與電子工程

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10.1109/LED.2010.2095820

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引用此

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title = "Ultralow switching energy Ni/GeOx/HfON/TaN RRAM",

abstract = "Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.",

keywords = "GeO, HfON, hopping conduction, resistive random access memory (RRAM)",

author = "Cheng, \{C. H.\} and Albert Chin and Yeh, \{F. S.\}",

note = "Funding Information: Manuscript received October 27, 2010; revised November 10, 2010; accepted November 11, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2095820",

language = "English",

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TY - JOUR

T1 - Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

AU - Cheng, C. H.

AU - Chin, Albert

AU - Yeh, F. S.

N1 - Funding Information: Manuscript received October 27, 2010; revised November 10, 2010; accepted November 11, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura.

PY - 2011/3

Y1 - 2011/3

N2 - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

AB - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

KW - GeO

KW - HfON

KW - hopping conduction

KW - resistive random access memory (RRAM)

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U2 - 10.1109/LED.2010.2095820

DO - 10.1109/LED.2010.2095820

M3 - Article

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VL - 32

SP - 366

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

摘要

ASJC Scopus subject areas

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Ultralow switching energy Ni/GeO_x/HfON/TaN RRAM