@article{01e6e779df034fc59e70da657011144f,
title = "Ultralow switching energy Ni/GeOx/HfON/TaN RRAM",
abstract = "Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.",
keywords = "GeO, HfON, hopping conduction, resistive random access memory (RRAM)",
author = "Cheng, {C. H.} and Albert Chin and Yeh, {F. S.}",
note = "Funding Information: Manuscript received October 27, 2010; revised November 10, 2010; accepted November 11, 2010. Date of publication January 6, 2011; date of current version February 23, 2011. This work was supported by the National Science Council of Taiwan. The review of this letter was arranged by Editor S. Kawamura.",
year = "2011",
month = mar,
doi = "10.1109/LED.2010.2095820",
language = "English",
volume = "32",
pages = "366--368",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",
}