Ultralow-power Ni/GeO/STO/TaN resistive switching memory

C. H. Cheng, Albert Chin, F. S. Yeh

研究成果: 雜誌貢獻文章

19 引文 斯高帕斯(Scopus)

摘要

Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.

原文英語
文章編號5545348
頁(從 - 到)1020-1022
頁數3
期刊IEEE Electron Device Letters
31
發行號9
DOIs
出版狀態已發佈 - 2010 九月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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