TY - GEN
T1 - Ultra-low switching power rram using hopping conduction mechanism
AU - Chin, Albert
AU - Cheng, C. H.
AU - Chiu, Y. C.
AU - Zheng, Z. W.
AU - Liu, M.
PY - 2013
Y1 - 2013
N2 - Very low 0.4 pJ switching energy, fast 50 ns switching time, large >10 5 retention window at 85°C, and 106 cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.
AB - Very low 0.4 pJ switching energy, fast 50 ns switching time, large >10 5 retention window at 85°C, and 106 cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.
UR - http://www.scopus.com/inward/record.url?scp=84885720029&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885720029&partnerID=8YFLogxK
U2 - 10.1149/05004.0003ecst
DO - 10.1149/05004.0003ecst
M3 - Conference contribution
AN - SCOPUS:84885720029
SN - 9781607683520
T3 - ECS Transactions
SP - 3
EP - 8
BT - Dielectric Materials and Metals for Nanoelectronics and Photonics 10
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -