Ultra-low switching power rram using hopping conduction mechanism

Albert Chin, C. H. Cheng, Y. C. Chiu, Z. W. Zheng, M. Liu

研究成果: 書貢獻/報告類型會議貢獻

4 引文 斯高帕斯(Scopus)

摘要

Very low 0.4 pJ switching energy, fast 50 ns switching time, large >10 5 retention window at 85°C, and 106 cycling endurance were achieved in Ni/GeOx/SrTiOy/TaN RRAM. This RRAM device has negative temperature coefficient (TC) and ruled by bulk hopping conduction mechanism that lead to potentially better distribution. This is in sharp contrast to the positive TC and randomly distributed metallic filament RRAM. Such low switching energy is necessary for large-array NAND memory application, a unique merit of this RRAM device.

原文英語
主出版物標題Dielectric Materials and Metals for Nanoelectronics and Photonics 10
頁面3-8
頁數6
版本4
DOIs
出版狀態已發佈 - 2012
事件Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, 美国
持續時間: 2012 十月 72012 十月 12

出版系列

名字ECS Transactions
號碼4
50
ISSN(列印)1938-5862
ISSN(電子)1938-6737

其他

其他Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
國家美国
城市Honolulu, HI
期間2012/10/072012/10/12

ASJC Scopus subject areas

  • Engineering(all)

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