Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

P. S. Chen*, S. W. Lee, Y. H. Liu, M. H. Lee, M. J. Tsai, C. W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)

指紋

深入研究「Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source」主題。共同形成了獨特的指紋。

INIS

Chemistry

Material Science

Physics

Engineering