Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si 1-x-yGexCy thin films on Si(0 0 1) with ethylene (C2H4) precursor as carbon source

P. S. Chen*, S. W. Lee, Y. H. Liu, M. H. Lee, M. J. Tsai, C. W. Liu


研究成果: 雜誌貢獻期刊論文同行評審

8 引文 斯高帕斯(Scopus)


The incorporation of substitutional carbon (Csub) in low-temperature epitaxial Si1-x-yGexCy thin films using SiH4, GeH4 and C2H4 by ultra-high-vacuum chemical vapor deposition was investigated in this work. The Si1-x-yGexCy alloys have been grown at a temperature range from 550 to 600 °C. The Csub content in Si 1-x-yGexCy increases with increasing C 2H4 partial pressure under the same SiH4 and GeH4 condition. The addition of excessive C2H4 causes the degradation of Si1-x-yGexCy crystallinity, surface roughening and the suppression of Ge incorporation. The C-C double bonds in C2H4 were responsible for the highest percentage of Csub, only 0.2%, incorporated in Si 0.8-yGe0.2Cy. The Ge, B and C concentration were determined by secondary ion mass spectroscopy (SIMS). The total C atoms incorporation efficiency is ∼0.05. The maximum concentration of C sub in Si1-x-yGexCy increases with the decrease of Ge content. In the ambient of hydride-based CVD at low-growth pressure and temperature, the presence of GeH4 would impede the incorporation of Csub in Si1-x-yGexC y/Si heterostructure using C2H4 as C source.

頁(從 - 到)15-19
期刊Materials Science in Semiconductor Processing
發行號1-3 SPEC. ISS.
出版狀態已發佈 - 2005 二月

ASJC Scopus subject areas

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


深入研究「Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si <sub>1-x-y</sub>Ge<sub>x</sub>C<sub>y</sub> thin films on Si(0 0 1) with ethylene (C<sub>2</sub>H<sub>4</sub>) precursor as carbon source」主題。共同形成了獨特的指紋。