Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

C. W. Lin*, D. Y. Wang, Y. Tai, Y. T. Jiang, M. C. Chen, C. C. Chen, Y. J. Yang, Y. F. Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.

原文英語
文章編號292002
期刊Journal of Physics D: Applied Physics
44
發行號29
DOIs
出版狀態已發佈 - 2011 七月 27

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 聲學與超音波
  • 表面、塗料和薄膜

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