Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao, W. C. Shen, R. S. Chen*, Z. W. Chang, M. C. Shih, Y. P. Chiu, C. M. Cheng


研究成果: 雜誌貢獻期刊論文同行評審

126 引文 斯高帕斯(Scopus)


Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

期刊Nature Communications
出版狀態已發佈 - 2018 12月 1

ASJC Scopus subject areas

  • 一般化學
  • 一般生物化學,遺傳學和分子生物學
  • 一般物理與天文學


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