Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao, W. C. Shen, R. S. Chen, Z. W. Chang, M. C. Shih, Ya-Ping Chiu, C. M. Cheng

研究成果: 雜誌貢獻文章

15 引文 (Scopus)

摘要

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

原文英語
文章編號1442
期刊Nature Communications
9
發行號1
DOIs
出版狀態已發佈 - 2018 十二月 1

指紋

Electron Transport
Electrons
Scanning Tunnelling Microscopy
electronics
Photoelectron Spectroscopy
Semiconductors
electrons
molybdenum disulfides
n-type semiconductors
Dangling bonds
Scanning tunneling microscopy
Photoelectron spectroscopy
electron states
Electron energy levels
scanning tunneling microscopy
photoelectric emission
Doping (additives)
conductivity
Crystals
spectroscopy

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

引用此文

Siao, M. D., Shen, W. C., Chen, R. S., Chang, Z. W., Shih, M. C., Chiu, Y-P., & Cheng, C. M. (2018). Two-dimensional electronic transport and surface electron accumulation in MoS2 Nature Communications, 9(1), [1442]. https://doi.org/10.1038/s41467-018-03824-6

Two-dimensional electronic transport and surface electron accumulation in MoS2 . / Siao, M. D.; Shen, W. C.; Chen, R. S.; Chang, Z. W.; Shih, M. C.; Chiu, Ya-Ping; Cheng, C. M.

於: Nature Communications, 卷 9, 編號 1, 1442, 01.12.2018.

研究成果: 雜誌貢獻文章

Siao, M. D. ; Shen, W. C. ; Chen, R. S. ; Chang, Z. W. ; Shih, M. C. ; Chiu, Ya-Ping ; Cheng, C. M. / Two-dimensional electronic transport and surface electron accumulation in MoS2 於: Nature Communications. 2018 ; 卷 9, 編號 1.
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