Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao, W. C. Shen, R. S. Chen, Z. W. Chang, M. C. Shih, Y. P. Chiu, C. M. Cheng

研究成果: 雜誌貢獻文章

28 引文 斯高帕斯(Scopus)

摘要

Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

原文英語
文章編號1442
期刊Nature Communications
9
發行號1
DOIs
出版狀態已發佈 - 2018 十二月 1

    指紋

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

引用此

Siao, M. D., Shen, W. C., Chen, R. S., Chang, Z. W., Shih, M. C., Chiu, Y. P., & Cheng, C. M. (2018). Two-dimensional electronic transport and surface electron accumulation in MoS2 Nature Communications, 9(1), [1442]. https://doi.org/10.1038/s41467-018-03824-6