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Tunneling induced electroluminescence from metal-oxide-semiconductor structure on silicon
Ching Fuh Lin
*
, Cheewee Liu, Miin Jang Chen,
Ming Hung Lee
, I. Cheng Lin
*
此作品的通信作者
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雜誌貢獻
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Mathematics
Electroluminescence
100%
Silicon
66%
Oxides
64%
Semiconductors
55%
Metals
53%
Luminescence
23%
Voltage
22%
Electronics
14%
Porous Silicon
13%
Biased
12%
Optoelectronics
11%
Thermal Equilibrium
10%
Oxidation
9%
Fabrication
9%
Semiconductor Devices
9%
Energy
9%
Energy Levels
8%
Wavelength
7%
Industry
6%
Electron
6%
Engineering & Materials Science
Electroluminescence
74%
Oxide semiconductors
55%
Silicon
36%
Metals
30%
Luminescence
27%
Electron energy levels
21%
Energy gap
21%
Oxides
16%
Electric potential
14%
Porous silicon
13%
MOS devices
13%
Electronics industry
11%
Optoelectronic devices
10%
Electrons
9%
Hot Temperature
9%
Semiconductor materials
8%
Oxidation
8%
Wavelength
8%
Electronic equipment
7%
Fabrication
6%
Chemical Compounds
Electroluminescence
48%
Tunneling
47%
Tunneling Current
24%
Band Gap
23%
Radiative Transition
23%
Voltage
22%
Luminiscence Type
22%
Energy State
20%
Oxide
16%
Energy
14%
Optoelectronics
14%
Semiconductor
11%
Industry
11%
Wavelength
11%
Flow
10%
Porosity
9%
Electron Particle
8%
Oxidation Reaction
7%
Metal
7%
Physics & Astronomy
metal oxide semiconductors
48%
electroluminescence
47%
silicon
25%
luminescence
14%
oxides
11%
porous silicon
10%
electric potential
10%
electronics
9%
semiconductor devices
9%
low voltage
9%
CMOS
8%
industries
7%
energy levels
7%
oxidation
6%
fabrication
5%
shift
5%
energy
5%