Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

Mu Chun Wang, Chong Kuan Du, Min Ru Peng, Shea Jue Wang, Shuang Yuan Chen, Chuan-Hsi Liu, Osbert Cheng, L. S. Huang, Shih Ching Lee

研究成果: 會議貢獻類型

3 引文 (Scopus)

摘要

Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

原文英語
頁面389-392
頁數4
DOIs
出版狀態已發佈 - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣
持續時間: 2013 二月 252013 二月 26

其他

其他2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家臺灣
城市Kaohsiung
期間13/2/2513/2/26

指紋

Nitridation
Plasmas
Nitrogen plasma
Gate dielectrics
Threshold voltage
Temperature
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

引用此文

Wang, M. C., Du, C. K., Peng, M. R., Wang, S. J., Chen, S. Y., Liu, C-H., ... Lee, S. C. (2013). Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. 389-392. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣. https://doi.org/10.1109/ISNE.2013.6512375

Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. / Wang, Mu Chun; Du, Chong Kuan; Peng, Min Ru; Wang, Shea Jue; Chen, Shuang Yuan; Liu, Chuan-Hsi; Cheng, Osbert; Huang, L. S.; Lee, Shih Ching.

2013. 389-392 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣.

研究成果: 會議貢獻類型

Wang, MC, Du, CK, Peng, MR, Wang, SJ, Chen, SY, Liu, C-H, Cheng, O, Huang, LS & Lee, SC 2013, 'Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs', 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣, 13/2/25 - 13/2/26 頁 389-392. https://doi.org/10.1109/ISNE.2013.6512375
Wang MC, Du CK, Peng MR, Wang SJ, Chen SY, Liu C-H 等. Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. 2013. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣. https://doi.org/10.1109/ISNE.2013.6512375
Wang, Mu Chun ; Du, Chong Kuan ; Peng, Min Ru ; Wang, Shea Jue ; Chen, Shuang Yuan ; Liu, Chuan-Hsi ; Cheng, Osbert ; Huang, L. S. ; Lee, Shih Ching. / Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs. 論文發表於 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013, Kaohsiung, 臺灣.4 p.
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abstract = "Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.",
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AU - Peng, Min Ru

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AU - Chen, Shuang Yuan

AU - Liu, Chuan-Hsi

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AB - Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.

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