Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance. Using these two variables to probe the impact of HK deposition integrity and the interface quality between channel and gate dielectric is an undetected and published topic. In the experiment, the lower N-concentration and higher anneal temperature is beneficial to the higher drive current and lower threshold for NMOSFET. However, the PMOSFET prefers the lower anneal temperature as well as lower N-concentration. Additionally, the phenomena for the combination of DPN process and strain engineering causing the non-uniform trend distribution of subthreshold swing with device channel lengths were exposed.
|出版狀態||已發佈 - 2013|
|事件||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣|
持續時間: 2013 二月 25 → 2013 二月 26
|其他||2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013|
|期間||2013/02/25 → 2013/02/26|
ASJC Scopus subject areas