Transport properties of ultra thin oxide gated Si SET near room temperature

Yue Min Wan, Kuo Dong Huang, Ching Lung Sung, Shu Fen Hu

研究成果: 書貢獻/報告類型會議論文篇章

3 引文 斯高帕斯(Scopus)

摘要

We have fabricated ultrathin oxide (thickness) of ∼ 6 nm gated silicon transistors with a point-contact junction of ∼ 20 nm thick, and 20 nm wide to explore single electron charging effects near room temperature. Current-voltage (I-V) measurements show clear periodic oscillations and a dramatic collapse of peak's maximum at various temperatures. Analysis of energy spacing relates the charging energy to a dot of ∼8 nm in size and also suggesting tunneling is via the first excited state. These low-power ∼ 30 pW and low cost devices can be very useful for the next generation nanoelectronics.

原文英語
主出版物標題2005 5th IEEE Conference on Nanotechnology
發行者IEEE Computer Society
頁面750-753
頁數4
ISBN(列印)0780391993, 9780780391994
DOIs
出版狀態已發佈 - 2005
事件2005 5th IEEE Conference on Nanotechnology - Nagoya, 日本
持續時間: 2005 七月 112005 七月 15

出版系列

名字2005 5th IEEE Conference on Nanotechnology
2

其他

其他2005 5th IEEE Conference on Nanotechnology
國家日本
城市Nagoya
期間2005/07/112005/07/15

ASJC Scopus subject areas

  • Engineering(all)

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