Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

S. J. Liu; J. Y. Juang; K. H. Wu; T. M. Uen; Y. S. Gou; J. Y. Lin

doi:10.1063/1.1481534

Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition

S. J. Liu, J. Y. Juang, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Lin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

20 引文斯高帕斯（Scopus）

摘要

Epitaxial CrO₂ (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO₂ derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO₂ were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO₃ precursor. The transport measurements show that the CrO₂ films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ₀+AT²e^(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T ^3/2 law and the slope suggests a critical wavelength of λ_Δ∼30.6Å beyond which spin-flip scattering becomes important.

原文	英語
頁（從 - 到）	4202-4204
頁數	3
期刊	Applied Physics Letters
卷	80
發行號	22
DOIs	https://doi.org/10.1063/1.1481534
出版狀態	已發佈 - 2002 6月 3
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.1481534

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abstract = "Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6{\AA} beyond which spin-flip scattering becomes important.",

author = "Liu, {S. J.} and Juang, {J. Y.} and Wu, {K. H.} and Uen, {T. M.} and Gou, {Y. S.} and Lin, {J. Y.}",

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AU - Liu, S. J.

AU - Juang, J. Y.

AU - Wu, K. H.

AU - Uen, T. M.

AU - Gou, Y. S.

AU - Lin, J. Y.

PY - 2002/6/3

Y1 - 2002/6/3

N2 - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

AB - Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

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Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

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ASJC Scopus subject areas

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Transport properties of CrO₂ (110) films grown on TiO ₂ buffered Si substrates by chemical vapor deposition