Transport properties of CrO2 (110) films grown on TiO 2 buffered Si substrates by chemical vapor deposition

S. J. Liu, J. Y. Juang, K. H. Wu, T. M. Uen, Y. S. Gou, J. Y. Lin

研究成果: 雜誌貢獻期刊論文同行評審

18 引文 斯高帕斯(Scopus)

摘要

Epitaxial CrO2 (110)-oriented films were fabricated on Si (100) substrates buffered by rutile TiO2 derived from oxidation of a pulsed-laser-deposited TiN layer. The epitaxial films of CrO2 were prepared by chemical vapor deposition in a two-zone furnace with oxygen flow from a CrO3 precursor. The transport measurements show that the CrO2 films are metallic with a Curie temperature of about 380 K. The temperature dependence of resistivity was best described by a phenomenological expression ρ(T)=ρ0+AT2e(-Δ/T) over the range of 5-350 K with Δ=94K. The magnetic measurements show the in-plane coercive fields are about 30 and 60 Oe at 300 and 5 K, respectively. The temperature dependent spontaneous magnetization follows Bloch's T 3/2 law and the slope suggests a critical wavelength of λΔ∼30.6Å beyond which spin-flip scattering becomes important.

原文英語
頁(從 - 到)4202-4204
頁數3
期刊Applied Physics Letters
80
發行號22
DOIs
出版狀態已發佈 - 2002 6月 3

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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