Transient time-resolved Raman scattering in semiconductors: Band-structure effects

C. Chia, Otto F. Sankey, K. T. Tsen

研究成果: 雜誌貢獻期刊論文同行評審

12 引文 斯高帕斯(Scopus)

摘要

Simulations of the transient time-resolved single-particle Raman-scattering cross section for nonequilibrium electrons is presented. Because of the nonequilibrium distribution and the short pulses, the fluctuation-dissipation theorem and the Fermi golden rule are no longer valid. We use an equation-of-motion method under the random-phase approximation to determine the Raman-scattering cross section. Particular attention is paid to the band-structure k-dependent resonant enhancement factor. The effect of the k-dependent resonant enhancement factor has been demonstrated to play an important role in determining the line shape of single-particle scattering spectra from spin-density-fluctuation contributions.

原文英語
頁(從 - 到)6509-6516
頁數8
期刊Physical Review B
45
發行號12
DOIs
出版狀態已發佈 - 1992 一月 1

ASJC Scopus subject areas

  • Condensed Matter Physics

指紋 深入研究「Transient time-resolved Raman scattering in semiconductors: Band-structure effects」主題。共同形成了獨特的指紋。

引用此