TiO2 -based indium phosphide metal-oxide-semiconductor capacitor with high capacitance density

Chun Hu Cheng*, Hsiao Hsuan Hsu, Kun I. Chou

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

We report a low-temperature InP p-MOS with a high capacitance density of 2.7 μF/ cm2 , low leakage current of 0.77 A/cm2 at 1 V and tight current distribution. The high-density and low-leakage InP MOS was achieved by using high- κ TiLaO dielectric and ultra-thin SiO2 buffer layer with a thickness of less than 0.5 nm. The obtained EOT can be aggressively scaled down to < 1 nm through the use of stacked TiLaO/SiO2 dielectric, which has the potential for the future application of high mobility III-V CMOS devices.

原文英語
頁(從 - 到)2810-2813
頁數4
期刊Journal of Nanoscience and Nanotechnology
15
發行號4
DOIs
出版狀態已發佈 - 2015 一月 1

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 生物醫學工程
  • 材料科學(全部)
  • 凝聚態物理學

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