Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

C. H. Liu*, Y. L. Chen, C. P. Cheng, H. W. Chen, H. W. Hsu, S. Y. Chen, H. S. Huang, M. C. Wang

*此作品的通信作者

研究成果: 書貢獻/報告類型會議論文篇章

摘要

Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.

原文英語
主出版物標題4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
出版狀態已發佈 - 2011
事件4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, 臺灣
持續時間: 2011 六月 212011 六月 24

出版系列

名字Proceedings - International NanoElectronics Conference, INEC
ISSN(列印)2159-3523

其他

其他4th IEEE International Nanoelectronics Conference, INEC 2011
國家/地區臺灣
城市Tao-Yuan
期間2011/06/212011/06/24

ASJC Scopus subject areas

  • 電氣與電子工程

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