@inproceedings{dc8ff37d2b89485a85716ad2396f23b6,
title = "Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics",
abstract = "Metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposition (ALD) HfLaO or HfZrLaO high-κ gate dielectrics have been fabricated, and the reliability of time-dependent-dielectric-breakdown (TDDB) characteristics have also been analyzed. HfZrLaO shows a better performance in comparison with HfLaO. Moreover, some important parameters for HfZrLaO and HfLaO gate dielectrics are compared in this study.",
keywords = "HfLaO, HfZrLaO, time dependent dielectric breakdown (TDDB)",
author = "Liu, {C. H.} and Chen, {Y. L.} and Cheng, {C. P.} and Chen, {H. W.} and Hsu, {H. W.} and Chen, {S. Y.} and Huang, {H. S.} and Wang, {M. C.}",
year = "2011",
doi = "10.1109/INEC.2011.5991693",
language = "English",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}