Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

H. W. Hsu, H. S. Huang, H. W. Chen, Chin-Pao Cheng, K. C. Lin, S. Y. Chen, M. C. Wang*, Chuan-Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The high κ gate dielectrics of MOS capacitors with HfZrLaO (standing for HfO 2 doped with La and Zr) or HfLaO (standing for HfO 2 doped with La) have been fabricated by atomic-layer-deposition (ALD), and the time-dependent-dielectric-breakdown (TDDB) reliability properties have also been investigated. The equivalent oxide thickness (EOT) of HfLaO or HfZrLaO is 0.72 nm or 0.68 nm, respectively. In terms of the gate leakage current density (J g ) versus EOT (J g -EOT) performance, HfZrLaO has a better characteristic in comparison with HfLaO. In terms of TDDB characteristics, the maximum voltages projected to have 10-year TDDB lifetime under 85 °C operation for HfZrLaO and HfLaO ultra-thin gate dielectrics are 1.87 V and 2.03 V, respectively. In addition, some important results, such as activation energy and field acceleration parameter, for HfLaO and HfZrLaO gate dielectrics are compared and summarized in this research.

原文英語
頁(從 - 到)2-6
頁數5
期刊Solid-State Electronics
77
DOIs
出版狀態已發佈 - 2012 十一月 1

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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