THz Spectroscopy as Non-destructive Alternative to Secondary Ion Mass Spectroscopy

Anup Kumar Sahoo, Wei Chen Au, Chan Shan Yang, Chia Ming Mai, Ci Ling Pan

研究成果: 書貢獻/報告類型會議論文篇章

摘要

In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

原文英語
主出版物標題2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
發行者IEEE Computer Society
頁面741-742
頁數2
ISBN(電子)9781728166209
DOIs
出版狀態已發佈 - 2020 11月 8
對外發佈
事件45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020 - Virtual, Buffalo, 美国
持續時間: 2020 11月 82020 11月 13

出版系列

名字International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2020-November
ISSN(列印)2162-2027
ISSN(電子)2162-2035

會議

會議45th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2020
國家/地區美国
城市Virtual, Buffalo
期間2020/11/082020/11/13

ASJC Scopus subject areas

  • 能源工程與電力技術
  • 電氣與電子工程

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