## 摘要

The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent S_{VG} (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm^{2}.

原文 | 英語 |
---|---|

頁（從 - 到） | 667-669 |

頁數 | 3 |

期刊 | IEEE Electron Device Letters |

卷 | 26 |

發行號 | 9 |

DOIs | |

出版狀態 | 已發佈 - 2005 9月 |

對外發佈 | 是 |

## ASJC Scopus subject areas

- 電子、光磁材料
- 電氣與電子工程