Threading dislocation induced low frequency noise in strained-Si nMOSFETs

W. C. Hua*, M. H. Lee, P. S. Chen, M. J. Tsai, Chee W. Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

32 引文 斯高帕斯(Scopus)

摘要

The correlations between the threading dislocations and the low-frequency noise characteristics of the n-type strained-Si field-effect transistors are studied using the devices with different sizes. The device-area-dependent SVG (power spectral density of the gate referred voltage noise) ratio of the strained-Si devices over the control Si devices obtained form geometric average can be understood by the modified carrier number fluctuation model with excess traps from the Poisson distributed threading dislocations. The equivalent trap number per threading dislocation extracted from the area-dependent SVG ratios is ∼85 for the strained-Si devices, and which results in ∼4.2X degradation of the SVG for the strained-Si device with the device area of 625 μm2.

原文英語
頁(從 - 到)667-669
頁數3
期刊IEEE Electron Device Letters
26
發行號9
DOIs
出版狀態已發佈 - 2005 九月
對外發佈

ASJC Scopus subject areas

  • 電子、光磁材料
  • 電氣與電子工程

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