Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si _1-xGe_x/Si nMOSFETs with HfO₂ gate dielectric

Engineering & Materials Science

• Gate dielectrics 100%
• Thermodynamic stability 72%
• Annealing 69%
• Substrates 49%
• Tensile strain 43%
• Leakage currents 37%
• Surface roughness 29%
• Degradation 24%

Chemical Compounds

• Dielectric Material 61%
• Annealing 55%
• Thermal Stability 46%
• Leakage Current 46%
• Diffusion 43%
• Surface Roughness 35%
• Strain 24%
• Surface 22%

Physics & Astronomy

• caps 74%
• thermal stability 61%
• annealing 42%
• surface roughness 29%
• leakage 29%
• field effect transistors 27%
• degradation 26%
• augmentation 21%
• performance 15%