Thermal reactions on the Cl-terminated SiGe(1 0 0) surface

Meng Wen Wu, Shiang Yuan Pan, Wei Hsiu Hung, Deng Sung Lin*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

摘要

Synchrotron radiation photoemission spectroscopy was used to investigate thermal reactions on the Cl-terminated SiGe(1 0 0)-2 × 1 surface. Populations of GeCl and SiCl surface species during thermal annealing are monitored by measuring the intensities of their corresponding Ge 3d, Si 2p and Cl 2p core level components. Experimental results indicate that the initially clean SiGe alloy surface is dominated by Ge-Ge and Ge-Si dimers, and that, after Cl2 adsorption, thermodynamic forces drive Si in the subsurface region to replace Ge in the GeCl species. Consequently, chlorine desorbs in the form of SiCl2 above ∼700 K, leading to etching of Si.

原文英語
頁(從 - 到)295-299
頁數5
期刊Surface Science
507-510
DOIs
出版狀態已發佈 - 2002 六月
對外發佈

ASJC Scopus subject areas

  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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