摘要
An unavoidable drawback when using high- κ dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high- κ TiHfO capacitors. This avoids sacrificing the overall κ value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | G54-G57 |
| 期刊 | Journal of the Electrochemical Society |
| 卷 | 154 |
| 發行號 | 3 |
| DOIs | |
| 出版狀態 | 已發佈 - 2007 |
| 對外發佈 | 是 |
UN SDG
此研究成果有助於以下永續發展目標
-
SDG 7 可負擔的潔淨能源
ASJC Scopus subject areas
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜
- 電化學
- 材料化學
指紋
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