Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors

K. C. Chiang; C. C. Huang; H. C. Pan; C. N. Hsiao; J. W. Lin; I. J. Hsieh; C. H. Cheng; C. P. Chou; A. Chin; H. L. Hwang; S. P. McAlister

doi:10.1149/1.2422874

Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors

K. C. Chiang^*, C. C. Huang, H. C. Pan, C. N. Hsiao, J. W. Lin, I. J. Hsieh, C. H. Cheng, C. P. Chou, A. Chin, H. L. Hwang, S. P. McAlister

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

26 引文斯高帕斯（Scopus）

摘要

An unavoidable drawback when using high- κ dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high- κ TiHfO capacitors. This avoids sacrificing the overall κ value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits.

原文	英語
頁（從 - 到）	G54-G57
期刊	Journal of the Electrochemical Society
卷	154
發行號	3
DOIs	https://doi.org/10.1149/1.2422874
出版狀態	已發佈 - 2007
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
可再生能源、永續發展與環境
表面、塗料和薄膜
電化學
材料化學

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Chiang, K. C., Huang, C. C., Pan, H. C., Hsiao, C. N., Lin, J. W., Hsieh, I. J., Cheng, C. H., Chou, C. P., Chin, A., Hwang, H. L., & McAlister, S. P. (2007). Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors. Journal of the Electrochemical Society, 154(3), G54-G57. https://doi.org/10.1149/1.2422874

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title = "Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors",

abstract = "An unavoidable drawback when using high- κ dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high- κ TiHfO capacitors. This avoids sacrificing the overall κ value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits.",

author = "Chiang, {K. C.} and Huang, {C. C.} and Pan, {H. C.} and Hsiao, {C. N.} and Lin, {J. W.} and Hsieh, {I. J.} and Cheng, {C. H.} and Chou, {C. P.} and A. Chin and Hwang, {H. L.} and McAlister, {S. P.}",

year = "2007",

doi = "10.1149/1.2422874",

language = "English",

volume = "154",

pages = "G54--G57",

journal = "Journal of the Electrochemical Society",

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publisher = "Electrochemical Society, Inc.",

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TY - JOUR

T1 - Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors

AU - Chiang, K. C.

AU - Huang, C. C.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Lin, J. W.

AU - Hsieh, I. J.

AU - Cheng, C. H.

AU - Chou, C. P.

AU - Chin, A.

AU - Hwang, H. L.

AU - McAlister, S. P.

PY - 2007

Y1 - 2007

N2 - An unavoidable drawback when using high- κ dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high- κ TiHfO capacitors. This avoids sacrificing the overall κ value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits.

AB - An unavoidable drawback when using high- κ dielectrics in capacitors is the small bandgap and the related reduction in the band-offset, which results in a large leakage current at elevated temperatures. We report improvements in the thermal leakage current by using Ni as a high-work-function top electrode for high- κ TiHfO capacitors. This avoids sacrificing the overall κ value by using a multilayer or laminate structure and results in better voltage linearity, which is important for analog/radio frequency integrated circuits.

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DO - 10.1149/1.2422874

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VL - 154

SP - G54-G57

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

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Thermal leakage improvement by using a high-work-function Ni electrode in high-κ TiHfO metal-insulator-metal capacitors

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