摘要
Using scanning tunneling microscopy, two systems of Fe deposition on clean Ge(1 1 1)-c(2 × 8) surface and surfaces with a (√3× √3)R30° Ag-Ge buffer layer were compared. Complex surface alloy structures were easily formed on Fe/Ge systems through annealing at 300-650 K. On clean Ge(1 1 1) surfaces, similar surface morphology evolution was observed when two different amounts of Fe were deposited. To reduce the complexity, (√3× √3)R30° Ag-Ge interfaces were used as buffer layers. The growth morphologies differed in the presence and absence of the buffer layers. During annealing at 570 K, (2 × 2) reconstruction platform islands were formed in the Fe-Ge system, which transformed to three-dimensional (3D) islands at 640 K. With Ag buffer layer, only nanoparticle growth occurred and 3D islands were formed early at 570 K. Generally, √19 ring clusters increased to break the order c(2 × 8) reconstruction by increasing the temperature and disappeared at 640 K in a Fe-Ge system, but only √7 ring clusters appeared at 390 K with (√3×√3)R30° Ag-Ge buffer layer.
原文 | 英語 |
---|---|
頁(從 - 到) | 778-783 |
頁數 | 6 |
期刊 | Applied Surface Science |
卷 | 355 |
DOIs | |
出版狀態 | 已發佈 - 2015 11月 15 |
ASJC Scopus subject areas
- 一般化學
- 凝聚態物理學
- 一般物理與天文學
- 表面和介面
- 表面、塗料和薄膜