Thermal evolution of Co islands on Ag/Si(111)- √3 × √3 and Ag/Ge(111)- √3 × √3 surfaces

Sung Lin Tsay, Chang Yu Kuo, Chun Liang Lin, Wen Chen Chen, Tsu-Yi Fu*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

10 引文 斯高帕斯(Scopus)

摘要

Thermal evolution of Co islands on Ag/Ge(1111) √3 × 3 and Ag/Si(111)- √ 3 × √3 surfaces was studied by scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Ag-√3 × √3 buffer layer can avoid alloy formation of Co and Si or Ge below the annealing temperature 500 °C. The growth behavior of Co on Ag/Si(111)√3 × √3 surfaces is very different from that on Ag/Ge(111)-√3 × √3 surfaces, although both the √3 structures can be classified as honeycomb chain trimer (HCT) model. Submonolayer Co on Ag/Si(111)-√3 × √3 surfaces prefer to form clusters below 500 °C. However, Co clusters nucleate and construct two-dimensional islands (2D islands) on Ag/Ge(111)-√3 × √3 surfaces after annealing to 300 °C. The result of different growth behavior comes from two major factors. One is antiphase boundaries (APBs) with extra electron states, which trap Co clusters on Ag/Si(111)-√3 × √3 surfaces. The other is the strong binding force that exists between Ge and Co atoms to cause the formation of Co period islands on Ag/Ge(111)-√3 × √3 surfaces.

原文英語
頁(從 - 到)1641-1645
頁數5
期刊Surface and Interface Analysis
40
發行號13
DOIs
出版狀態已發佈 - 2008 十二月 1

ASJC Scopus subject areas

  • 化學 (全部)
  • 凝聚態物理學
  • 表面和介面
  • 表面、塗料和薄膜
  • 材料化學

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