Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu, Min-Hung Lee, H. T. Chen, C. F. Huang, C. Y. Peng, L. S. Lee, M. J. Kao

研究成果: 書貢獻/報告類型會議貢獻

2 引文 斯高帕斯(Scopus)

摘要

The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

原文英語
主出版物標題ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
頁面1207-1210
頁數4
DOIs
出版狀態已發佈 - 2008 十二月 1
事件2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国
持續時間: 2008 十月 202008 十月 23

出版系列

名字International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

其他

其他2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
國家中国
城市Beijing
期間08/10/2008/10/23

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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    Liu, Y. T., Lee, M-H., Chen, H. T., Huang, C. F., Peng, C. Y., Lee, L. S., & Kao, M. J. (2008). Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits. 於 ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (頁 1207-1210). [4734764] (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT). https://doi.org/10.1109/ICSICT.2008.4734764