Thermal accumulation improvement for fabrication manufacturing of monolithic 3D integrated circuits

Y. T. Liu, Min-Hung Lee, H. T. Chen, C. F. Huang, C. Y. Peng, L. S. Lee, M. J. Kao

    研究成果: 書貢獻/報告類型會議論文篇章

    2 引文 斯高帕斯(Scopus)

    摘要

    The thermal accumulation improvement is based on laser epitaxial growth for monolithic 3D-ICs manufacturing. We propose one structure which has a thermal conduction layer such as Cu in ILD oxide layer. To reduce the Via depth and ILD oxide thickness can improve the re-crystallization quality for upper Si layer. With the conduction Cu layer, the Via depth can reduce to 200 nm, and the maximum temperature of the 1st layer poly gate and source/drain maintains as low as∼320K and∼350K, respectively, for laser re-crystallization annealing.

    原文英語
    主出版物標題ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
    頁面1207-1210
    頁數4
    DOIs
    出版狀態已發佈 - 2008 十二月 1
    事件2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, 中国
    持續時間: 2008 十月 202008 十月 23

    出版系列

    名字International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

    其他

    其他2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
    國家中国
    城市Beijing
    期間2008/10/202008/10/23

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

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