摘要
A comprehensive time-resolved electronic Raman scattering theory for nonequilibrium carrier excitations in semiconductors is presented. The following are simultaneously taken into account: (i) the effects of the ultrashort laser pulse for probing the excited carrier distribution function; (ii) the fact that the fluctuation-dissipation theorem is not valid under conditions of nonequilibrium carrier distributions; (iii) the effects of quasiparticle life time via a finite collision time in the Raman scattering cross section; and (iv) the effect of the time-dependent resonant enhancement factor due to the band structure. The single-particle scattering spectra for spin-density fluctuation contribution is found to be significantly broadened by an ultrashort laser pulse, but is substantially narrowed by the finite collision time. The effect of the time-dependent resonant enhancement factor has been demonstrated to broaden the line shape of single-particle scattering spectra for the spin-density fluctuation contribution as the probe photon energy increases.
原文 | 英語 |
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頁(從 - 到) | 4325-4335 |
頁數 | 11 |
期刊 | Journal of Applied Physics |
卷 | 72 |
發行號 | 9 |
DOIs | |
出版狀態 | 已發佈 - 1992 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 物理與天文學 (全部)